Quantitative depth profiling resonance ionization mass spectrometry of GaAs/AlGaAs heterojunction bipolar transistorsDOWNEY, S. W; EMERSON, A. B; KOPF, R. F et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 385-387, issn 0734-211XConference Paper

The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistorsDUAN-LEE TANG, D; TZE-CHIANG CHEN; CHUANG, C. T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1703-1710, issn 0018-9383, 8 p., 1Article

Modelling of a new high current gain bipolar transistor with n-doped hydrogenated silicon emitterBONNAUD, O; VIKTOROVITCH, P.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 1, pp 17-22, issn 0143-7100Article

Photon emission from avalanche breakdown in the collector junction of GaAs.AlGaAs heterojunction bipolar transistorsCHEN, J; GAO, G. B; HUANG, D et al.Applied physics letters. 1989, Vol 55, Num 4, pp 374-376, issn 0003-6951, 3 p.Article

A pnp AlGaAs/GaAs heterojunction bipolar transistorCHAND, N; HENDERSON, T; FISCHER, R et al.Applied physics letters. 1985, Vol 46, Num 3, pp 302-304, issn 0003-6951Article

A novel isolated, compensated Darlington base-drive configurationENSLIN, J. H. R.European transactions on electrical power engineering. 1995, Vol 5, Num 3, pp 149-156, issn 0939-3072Article

C_BC reduction in InP heterojunction bipolar transistor with selectively implanted collector pedestalYINGDA DONG; GRIFFITH, Zach; DAHLSTRÖM, Mattias et al.DRC : Device research conference. 2004, pp 67-68, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Contribution à la modélisation des transistors haute fréquence = Contribution to the high frequency transistor modelingZimmer, Thomas; Dom, Jean-Paul.1992, 158 p.Thesis

Bitstream trimming of a smart temperature sensorPERTIJS, Michiel A. P; HUIJSING, Johan H.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 2, 904-907Conference Paper

On the suitability of SiGe HBTs for high-temperature (to 300°C) electronicsTIANBING CHEN; KUO, Wei-Min; ENHAI ZHAO et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 217-220, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

CARACTERISATION DES DEGRADATIONS DES IGBTS EN MILIEU INDUSTRIEL = CHARACTERIZATION OF IGBT DEGRADATIONS IN INDUSTRIAL ENVIRONMENTMaouad, Alain; Charles, Jean-Pierre.1999, 160 p.Thesis

SiGe HBTs with cut-off frequency of 350GHzRIEH, J.-S; JAGANNATHAN, B; KHATER, M et al.IEDm : international electron devices meeting. 2002, pp 771-774, isbn 0-7803-7462-2, 4 p.Conference Paper

Contribution à l'étude de la réalisation du transistor bipolaire à hétérojonction GaAlAs/GaAs à structure autoalignée en technologie double mesa = Optimization of a self-aligned double mesa technology for AlGaAs/GaAs heterojonction bipolar transistorsBimuala, Bamueni; L'Hoir, Alain.1991, 217 p.Thesis

Losses in PWM inverters using IGBTs. ReplyKOLAR, J. W; CASANELLAS, F; ZACH, F. C et al.IEE proceedings. Electric power applications. 1995, Vol 142, Num 4, pp 285-288, issn 1350-2352Article

Simulation of the dynamic behaviour of bipolar power transistors with PSPICELU, Y.Archiv für Elektrotechnik (Berlin). 1992, Vol 75, Num 4, pp 303-309, issn 0003-9039Article

BILOW: simulation of low-temperature bipolar device behaviorCHRZANOWSKA-JESKE, M; JAEGER, R. C.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1475-1488, issn 0018-9383, 14 p.Article

Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperatureSTORK, J. M. C; HARAME, D. L; MEYERSON, B. S et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1503-1509, issn 0018-9383, 7 p.Article

The SIT saturation protected bipolar transistorWILAMOWSKI, B. M; MATTSON, R. H; STASZAK, Z. J et al.IEEE electron device letters. 1984, Vol 5, Num 7, pp 263-265, issn 0741-3106Article

Generation and integration of scalable bipolar compact modelsSHERIDAN, David C; MURTY, Ramana M; NEWTON, Kim M et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 132-139, isbn 0-7803-8618-3, 1Vol, 8 p.Conference Paper

Broadband amplifier at 28 GHz based on the InP/InGaAs HBT phototransistor for optical-radio interfaceTHURET, J; GONZALEZ, C; BENCHIMOL, J. L et al.OMW : interactions between microwaves and optics. International summer school. 1998, pp 142-143, isbn 2-910986-17-9Conference Paper

Forward blocking capability of double gate IGBTs at high temperaturesQIN HUANG; GEHAN AMARATUNGA.Solid-state electronics. 1995, Vol 38, Num 5, pp 981-982, issn 0038-1101Article

Impact of fluorine incorporation in the polysilicon emitter of NPN bipolar transistorsBOLOGNESI, C. R; ROWLANDSON, M. B.IEEE electron device letters. 1995, Vol 16, Num 5, pp 172-174, issn 0741-3106Article

Propriétés statiques et dynamiques d'un transistor bipolaire à collecteur réalisé par implantation haute énergie développé en technologie VLSI CMOS = Static and dynamic properties of a bipolar transistor with high energy ion implanted collector developed in VLSI CMOS technologyMarty, Arlette; Nouailhat.1992, 176 p.Thesis

An analytical relations for determining the base transit times and forward-biased junction capacitances of bipolar transistorsLEE, S. W; PRENDERGAST, E. J.Solid-state electronics. 1985, Vol 28, Num 8, pp 767-773, issn 0038-1101Article

Vertical bipolar transistors on buried silicon nitride layersMUNZEL, H; ALBERT, G; STRACK, H et al.IEEE electron device letters. 1984, Vol 5, Num 7, pp 283-285, issn 0741-3106Article